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88E11 3N20D 101MM B2003RU DTA144E SL1613 CSNE33 TPS56300
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  c opyright ruichips semiconductor co . , ltd rev . a C may ., 2011 www. ruichips .com ru 3 0 1 2 0 r n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t c =25 c unl ess otherwise noted) v dss drain - source voltage 3 0 v gss gate - source voltage 2 0 v t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25 c 1 2 0 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 48 0 a t c =25 c 1 2 0 i d continuous drain current t c =100 c 100 a t c =25 c 150 w p d maximum power dissipation t c = 100 c 75 w r q jc thermal resistance - junction to case 1 c /w drain - source avalanche ratings e as avalanche energy, single pulsed 306 m j ? 30 v/ 120 a, r ds ( on ) = 2.5 m w (typ.) @ v gs =10v r ds ( on ) = 3.3 m w (typ.) @ v gs = 4.5 v ? super high dense cell design ? ultra low on - resistance ? 100% avalanche tested ? lead free and green devices available ( rohs compliant) ? d c - dc converters absolute maximum ratings n - channel mosfe t to - 220
c opyright ruichips semiconductor co . , ltd rev . a C may ., 2011 2 www. ruichips .com ru 3 01 2 0 r electrical characteristics ( t c =25 c unless otherwise noted) ru 3 0 1 2 0 r symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - s ource breakdown voltage v gs =0v, i ds =250 m a 3 0 v v ds = 3 0 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 1 0 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 1 2 3 v i gss gate leakage current v gs = 2 0 v, v ds =0v 10 0 n a v gs = 10 v, i ds = 60 a 2.5 4 m w r ds ( on ) drain - source on - state resistance v gs = 4.5 v, i ds = 48 a 3.3 6 m w notes : calculated continuous current based on maximum allowable junction temperature . limited by bonding wire. pulse width limited by safe operating area . limited by t jmax , i as = 35 a, v dd = 24 v, r g = 50 , starting t j = 25c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 60 a, v gs =0v 1. 2 v t rr reverse recovery time 45 ns q rr reverse recovery charge i sd = 60 a, dl sd /dt=100a/ m s 9 0 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1.8 w c iss input capacitance 3 1 70 c oss output capacitance 4 80 c rss reverse transfer capacitance v gs =0v, v ds = 15 v, frequency=1.0mhz 2 6 5 pf t d ( on ) turn - on del ay time 2 5 t r turn - on rise time 1 0 6 t d ( off ) turn - off delay time 6 4 t f turn - off fall time v dd = 15 v, r l = 0.3 w , i ds = 60 a, v gen = 10v, r g = 4.7 w 3 6 ns gate charge characteristics q g total gate charge 6 5 q gs gate - s ource charge 15 q gd gate - drain charge v ds = 24 v, v gs = 10v, i ds = 60 a 2 0 nc
c opyright ruichips semiconductor co . , ltd rev . a C may ., 2011 3 www. ruichips .com ru 3 01 2 0 r typical characteristics power dissipation drain current p tot - power ( w) i d - drain curren t (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C may ., 2011 4 www. ruichips .com ru 3 01 2 0 r typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C may ., 2011 5 www. ruichips .com ru 3 01 2 0 r typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction temp erature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C may ., 2011 6 www. ruichips .com ru 3 01 2 0 r avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C may ., 2011 7 www. ruichips .com ru 3 01 2 0 r ordering and marking information ru 3 0 1 2 0 package (available) r : to 220 operating temperature range c : - 55 to 1 75 oc assembly material g : green & lead free packaging t : tube
c opyright ruichips semiconductor co . , ltd rev . a C may ., 2011 8 www. ruichips .com ru 3 01 2 0 r package information to - 220fb - 3l all dimensions refer to jedec standard do not includ e mold flash or protrusions mm inch mm inch symbol min nom max min nom max symbol min nom max min nom max a 4. 40 4.57 4.70 0.173 0.180 0.185 ?p1 1.40 1.50 1.60 0.055 0.059 0.063 a1 1.27 1.30 1.33 0.050 0.051 0.052 e 2.54bsc 0.1bsc a2 2.35 2.40 2.50 0.093 0.094 0.098 e1 5.08bsc 0.2bsc b 0.77 - 0.90 0.030 - 0.035 h1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.3 6 0.048 - 0.054 l 12.75 - 13.17 0.502 - 0.519 c 0.48 0.50 0.52 0.019 0.020 0.021 l1 - - 3.95 - - 0.156 d 15.40 15.60 15.80 0.606 0.614 0.622 l2 2.50ref . 0.098ref . d1 9.00 9.10 9.20 0.354 0.358 0.362 ?p 3.57 3.60 3.63 0.141 0.142 0.143 dep 0.05 0.10 0.2 0 0.002 0.004 0.008 q 2.73 2.80 2.87 0.107 0.110 0.113 e 9.70 9.90 10.10 0.382 0.389 0.398 1 5 7 9 5 7 9 e 1 - 8.70 - - 0.343 - 2 1 3 5 1 3 5 e 2 9.80 10.00 10.20 0.386 0.394 0.401
c opyright ruichips semiconductor co . , ltd rev . a C may ., 2011 9 www. ruichips .com ru 3 01 2 0 r customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com


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